Abstract
The bandgap reference circuits are very sensitive to electromagnetic interferences (EMI) which induce voltage offset on their outputs. Two bandgap chips with different technologies are designed for EMC study. The conducted immunity of VDD and VSS pins are tested following direct power injection (DPI) method. The aim of this study is to compare the susceptibility characteristics of same bandgap circuit but with SI and Silicon on Insulator (SOI) technologies.
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