Abstract
Monitoring optical emission has become a valuable tool for the plasma processing of semiconductor materials. We have extended this technique by monitoring atomic emission from etch products excited in an auxiliary discharge located downstream of the plasma processing region. In this configuration, process monitoring can be achieved even in the absence of a reactive plasma, and emission intensities are independent of the plasma characteristics in the process discharge. The method is applied to the determination of the absolute etch rate of silicon by atomic fluorine.
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