Down-shifting emission by charge transfer band in porous silicon infiltrated with Eu3+ and Gd3+ ions

Abstract

Down-shifting emission properties of europium (Eu3+) and gadolinium (Gd3+) ions incorporated in porous silicon (PS) layers are presented. Different samples were prepared by electrochemical etching of p+-type crystalline silicon wafers followed by simple impregnation with rare earth ions from nitrate solutions of europium and gadolinium and subsequent high temperature annealing in air. The samples exhibited room temperature photoluminescence (PL) and the excitation spectra present a wide excitation band around 233 nm which can be associated to the charge transfer band transitions. This band is attributed to O2−(2p)→Eu3+(4f) ligand-to-metal charge transfer. The down-shifting emission for Gd+3:Eu3+ was analyzed by a simple rate equation model to study the interaction between the O2− ions and Eu3+ ions. The exact solution of this model agrees very well with the experimental results.