Abstract
Significant fractions of the scattered and recoil ions from single collisions of keV O + ions with near surface atoms of amorphous silicon are found to be doubly and triply charged. Definite threshold energies are found for each multicharged ion, suggesting that they are produced in close binary collisions with individual surface atoms and that inner shell vacancies are produced by molecular orbital promotion. Characteristic velocities for the decay of O +, O 2+, Si +, Si 2+, and Si 3+ in passing out through the surface are reported.
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