Abstract
We are researching neuromorphic devices using amorphous oxide semiconductor (AOS) thin films as synapses. The device produced in this study is a cross-point device in which a two-layer In-Ga-Zn-O (IGZO) thin film deposited by RF magnetron sputtering method is sandwiched between electrodes. This device shows good memory characteristics and can be used as a ReRAM. The on / off ratio at 1V was 723. This large resistance change could be used as a neuromorphic synapse.
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