Double-gate Tri-active Layer Channel Amorphous-IGZO Thin Film Transistor for AMLCD Pixel Circuit

Abstract

Active Matrix Liquid Crystal Displays (AMLCDs) of high resolution such as Ultra-HD $(7680\times 4320$ pixels), density (more than 300 ppi), and refresh rate (higher than 240 Hz) are in latest trend. Amorphous-Indium Gallium Zinc Oxide Transistor ( $\alpha$ -IGZO TFTs) has proven its prominence as switching element in pixel driving circuits of displays, to encompass those trends, improved high speed $\alpha$ -IGZO TFTs are required. Improved electrical characteristics have been obtained by single and double gate Tri-active layer (TAL) channel $\alpha$ -IGZO TFTs. In this present research work, authors have analyzed the performance of DG-TAL $\alpha$ -IGZO TFT which has three multi-stack layer (IGZO/ITO/ITO1) as channel and two gates. The proposed novel DG- TAL Thin Film Transistor and analysis of transfer characteristics have displayed enhanced electrical output parameters such as high capacitance $(C_{DI})$ 26.2 nF / cm2, high mobility $(\mu_{FE})$ 16.93 cm2/V·s and steeper subthreshold swing $(SS)$ 95 m V /decade. The superior electrical behavior of the device is promising for its application AMLCD pixel circuit.