Abstract
Double-gate (DG) transistors have emerged as promising devices for nano-scale circuits due to their better scalability compared to bulk CMOS. Among the various types of DG devices, quasi-planar SOI FinFETs are easier to manufacture compared to planar double-gate devices. DG devices with independent gates (separate contacts to back and front gates) have recently been developed. DG devices with symmetric and asymmetric gates have also been demonstrated. Such device options have direct implications at the circuit level. Independent control of front and back gate in DG devices can be effectively used to improve performance and reduce power in sub-50nm circuits. Independent gate control can be used to merge parallel transistors in non-critical paths. This results in reduction in the effective switching capacitance and hence power dissipation. We show a variety of circuits in logic and memory that can benefit from independent gate operation of DG devices. As examples, we show the benefit of independent gate operation in circuits such as dynamic logic circuits, Schmitt triggers, sense amplifiers, and SRAM cells. In addition to independent gate option, we also investigate the usefulness of asymmetric devices and the impact of width quantization and process variations on circuit design.
Published Version (Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.