Abstract
We have studied the electrical properties of GaAs/Al0.4Ga0.6As double-barrier resonant tunneling structures incorporating finite superlattices in the contact regions. The superlattices effectively act as energy filters defining the initial and final tunneling states. We have investigated an asymmetric device with one (emitter) superlattice and a symmetric device with two (emitter and collector) superlattices. These show significantly improved J(V) properties compared to other double-barrier structures and the superlattice tunnel diode.
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