Abstract
The temperature dependence of the spectra of photoluminescence (PL) from a blue InGaN/GaN multiplequantum-well (MQW) structure is investigated at lower excitation power. Two emission peaks, related to InGaN and assigned to In-rich quasi-quantum dots (QDs) and InGaN-matrix in the full PL spectrum, were observed. Upon increasing the temperature, both PL peak linewidths exhibited "double-W-shaped" (narrowing–broadening–narrowing–broadening–narrowing–broadening) temperature dependence. Combined with the observed features of the temperature dependences of the PL intensities, the temperature-dependent behaviors in this case can be interpreted as the relaxation and thermalization of carriers inside respective phase structures and the transfer of carriers between two phase structures, because of the strong phase separation and significant component fluctuation in the InGaN well layers.
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