Abstract
Emitters of npn silicon bipolar transistors have been made by a phosphorus implantation at 50 keV P + to a dose of 1×10 16 cm −2. This was followed by high temperature processes to reduce lattice disorder, to drive-in the phosphorus atoms, and to form oxide layers. The first process step was carried out by using single- and double-step anneals in various ambients (dry N 2, dry O 2 and steam) while the drive-in and oxidation steps were common for all structures. Electrical measurements on emitter/base leakage current, low frequency (popcorn) noise and current gain showed that the annealing ambient had a major influence. The transistors with implanted emitters annealed in a dry N 2 ambient are comparable to commercial ones with thermally-diffused emitters. TEM observations on samples annealed in steam ambients revealed dislocatons extending into the sidewall of the emitter/base junction. This sidewall penetration of dislocations is the main origin of the degradation of the emitter/base junction characteristics.
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