Abstract
To explain the current dependences of the mean-square value of low-frequency (LF) noise current in green InGaN light emitting diodes (LEDs), a double stage low-frequency noise equivalent circuit of the LED is proposed. It is shown that the nonmonotonic dependence of the LF noise on the injection current in the LED can be explained by the effect of two LF noise generators: a noise current generator, which is localized near the heterojunction and is determined by tunnel-recombination processes at the interface, and a generator determined by recombination processes in the active region of the structure.
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