Abstract
Double sided c-axis oriented HgBa2CaCu2O6+δ (Hg-1212) thin films have been prepared on lanthanum aluminate as well as on CeO2 buffered r-plane sapphire substrates using an improved Tl–Hg cation-exchange process. The films on LaAlO3 exhibited critical current densities (Jc) of up to 7 MA/cm2, and films on sapphire substrates showed Jc values of up to 5 MA/cm2 in a self-field. The superconducting transition temperatures (Tc) were in the range of 121–124 K for films on LaAlO3 substrates and 118–122 K for films on sapphire substrates. Microwave surface resistances (Rs) of about 2 mΩ at 17.86 GHz and 77 K for films on lanthanum aluminate substrates have been obtained. Films on sapphire substrates showed slightly higher Rs values of 3–6 mΩ, probably due to a microstructure which is more disturbed by defects.
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