Abstract
The concept of on-chip double-resonant-tunneling-diode (RTD) patch-antenna oscillator has the virtues of compactness, simplicity, high isolation from the external circuitry, and increased output power. Relying on this concept, we demonstrate an order of magnitude increase in the output power compared to previous reports on patch-antenna RTD oscillators: 10 μW at the fundamental frequency of 525 GHz and 70 μW at 330 GHz. Estimates show that significantly higher frequencies and powers are achievable with this type of oscillator. Only optical lithography has been used in the fabrication process of the oscillators.
Highlights
The RTD oscillators in the subterahertz and THz range nowadays are based on the slot antennas fabricated on top of a semiinsulating semiconductor (InP) substrate.3,4 Almost all radiation in such structures is emitted into the substrate; a hemispherical
We demonstrate an order of magnitude increase in the output power compared to previous reports on patch-antenna RTD oscillators: 10 lW at the fundamental frequency of 525 GHz and 70 lW at 330 GHz
One approach relies on double-antenna oscillators, where an RTD slot resonator is coupled to a second emitting antenna, which is forcing the radiation to be emitted into the free space; the design and fabrication of such oscillators are rather challenging though
Summary
The RTD oscillators in the subterahertz and THz range nowadays are based on the slot antennas fabricated on top of a semiinsulating semiconductor (InP) substrate.3,4 Almost all radiation in such structures is emitted into the substrate; a hemispherical. ABSTRACT The concept of on-chip double-resonant-tunneling-diode (RTD) patch-antenna oscillator has the virtues of compactness, simplicity, high isolation from the external circuitry, and increased output power.
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