Abstract
In this paper, we discuss the design of semiconductor electrostatic and magnetostatic Aharonov-Bohm interferometers that could operate at liquid nitrogen temperature. We find that for elevated temperature operation, one dimensional structures constructed from quantum wires are invariably the only choice, especially when transport is diffusive instead of ballistic. We have proposed such a structure which can be fabricated by present day technology. It may exhibit large conductance modulation in an electric field at 77 K and is an ideal configuration for “Quantum Interference Transistors” (QUITS) based on the electrostatic Aharonov-Bohm effect.
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