Abstract
The two-hit resolution of a silicon drift chamber is measured using a pulsed Nd: YAG laser and a time digitizer readout. The data is analyzed by forming the covariance matrix in time samples, and transforming to a matrix in amplitude and time variation of each of the two hits. The resolution on the two-hit separation is found to be better than 25 μm with a drift field of 530 V/cm and a separation of more than 500 μm, with the resolution increasing to 50 μm as the separation nears 500 μ. Results are also presented for multiply ionizing tracks, showing a great improvement over single minimum ionizing.
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