Double-node-upset aware SRAM bit-cell for aerospace applications

Abstract

In aerospace applications, the continuous scaling of CMOS technology makes SRAM cells more and more susceptible to soft errors. To overcome this issue, a radiation-hardened-based (RHBD) 13T SRAM cell has been proposed in this paper. The proposed cell has several benefits over other standard RHBD cells. The proposed cell can not only recover from SNUs induced at any of its sensitive nodes but also from DNUs induced at any of its sensitive node pairs. It has the lowest hold, total power cost, the highest critical charge, moderate area overhead, and better stability. To improve speed, the proposed cell uses a unique feedback path among its internal nodes. Finally, the figure of merit (FOM), SNU probability of failure (POF) comparison of cells validate that the proposed cell is a better choice for sub-nanometer aerospace applications.