Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory

K.-T Chen,C.-Y Chueh,G.-Y Siang,H Liang,Fan-Chun Hsieh ,C.-Y Wang,Yun Lung Lin ,Chieh Lo ,Hsin-Yun Yang ,M H Lee,Shao Hsi Chang ,Ping-Cheng Yeh ,Chienliu Chang ,Y.-J Yang,Yi-Ju Tseng ,Yang-Yan Tseng ,Yu-De Lin ,Shuo‐Hung Chang ,Pei-Jer Tzeng ,M.-H Liao,J.-H Liu,S.-H Chiang

doi:10.1109/irps45951.2020.9129088

Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory

K.-T Chen, C.-Y Chueh + Show 20 more

https://doi.org/10.1109/irps45951.2020.9129088

Copy DOI

Publication Date: Apr 1, 2020

Citations: 8

Affiliation: National Taiwan Normal University, Industrial Technology Research Institute, Silicon Motion (Taiwan), National Chung Hsing University, National Taiwan University

#Ferroelectric HfZrO #High Endurance + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

The 3D double layer Ω-type FETs with ferroelectric HfZrO 2 gate served for one-transistor (1T) architecture is demonstrated and studied for memory reliability. The high endurance is presented more than 106 cycles P/E with 4V. Multi-domain model integrated with TCAD is proposed by adding a coupling coefficient for the polarization gradient term of the free energy, and calculating for nanosheet GAA-FETs. The polarization orientation is assigned randomly by Gaussian distribution into individual domain for multi-dimensional 3D device simulation. The data retention is degraded due to depolarization field occurrence at the corner by modeling results. The feasible structure paves the candidate for emerging memory applications.

Full Text