Abstract
In this paper, a thermal imprint technique, double-layer nanoimprint lithography (dlNIL), is introduced, allowing complete filling of features in the dimensional range of submicrometer to millimeter. The imprinting and filling quality of dlNIL was studied on Si substrates as a model system and compared to results obtained with regular NIL (NIL) and reverse NIL (rNIL). Wavy foils were imprinted with NIL, rNIL and dlNIL and the patterning results compared and discussed. With dlNIL, a new application possibility was introduced in which two different resists having, for example, a different etch resistance to a certain plasma were combined within one imprint step. dlNIL allows extension to many resist combinations for tailored nanostructure fabrication.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
