Abstract
We propose a BaCeO3/BaZrO3 double-layer buffer template, grown on a SrTiO3 substrate, for epitaxial growth of a target oxide film with large lattice constants of over 4.1 Å. Lattice mismatch from the substrate was mostly accommodated for by a BaZrO3 arbitrating layer. Having an ideal in-plane lattice structure, BaCeO3 served as the main-buffer to grow the target material. We demonstrated commensurate epitaxy of BaBiO3 (BBO, a = 4.371 Å) utilizing the new buffer template. Our results can be applied to heteroepitaxy and strain engineering of novel oxide materials of sizable lattice constants.
Highlights
We propose a BaCeO3/BaZrO3 double-layer buffer template, grown on a SrTiO3 substrate, for epitaxial growth of a target oxide film with large lattice constants of over 4.1 Å
We demonstrated commensurate epitaxy of BaBiO3 (BBO, a = 4.371 Å) utilizing the new buffer template
These strain engineering approaches have been useful for films with perovskite oxides of the form ABO3 (A is a rare earth or alkali metal, B is a transition metal or post-transition metal, and O is oxygen)
Summary
We propose a BaCeO3/BaZrO3 double-layer buffer template, grown on a SrTiO3 substrate, for epitaxial growth of a target oxide film with large lattice constants of over 4.1 Å. Double-layer buffer template to grow commensurate epitaxial BaBiO3 thin films Another notable example is BaBiO3 (BBO, apseudo-cubic = 4.371 Å),[10] which is well-known for being the mother compound of the high-T c superconductors, Ba1-xKxBiO3 (T c = 34 K)[11] and BaPbxBi1-xO3 (T c = 13 K).[12] In addition, it has recently been predicted that electron-doped BBO is an oxide topological insulator, resulting from strong spin-orbit coupling of Bi.[13,14] strain engineering is an important tool for observing novel physical properties of materials with large lattice constants.
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