Double-Junction Schottky Diodes Using a Ti/Si/Al Structure

Abstract

Ti/Si/Al structures are studied theoretically and experimentally. The effect of the reverse-biased junction on the current–voltage characteristic of the entire structure is revealed. It is noted that the behavior of the curve is determined by the image-force lowering of the potential barrier. The current–voltage characteristic is shown to obey a power law if the voltage is low enough. It is established that the capacitance of the structure decreases with increasing voltage if the latter is positive. This phenomenon is modeled using two capacitors in a series.