Abstract
Oxygen vacancy (VO) defects are common in oxide semiconductors, which are generally believed to be double-edged in detectors. They contribute to a photo gain effect and consequently high responsivity. However, VO defects typically result in high dark current and long persistent photoconductivity (PPC), severely affecting the weak-light detecting and quick refreshing abilities. Here, a simple two-terminal architecture is constructed on amorphous Ga2O3 double layers. By adopting a periodic bias-switching working method, we found that the PPC is stably suppressed and a robustly high refresh rate is achieved, accompanied with the ultra-high photo-to-dark current ratio (>109), detectivity (8.7×1017 Jones) and UV-vis rejection ratio (>108). The combination of VO-gradient double-layer structure and new working method enables an unimpeded transportation of photo-generated electrons under light illumination and a swift block of the trap-released electrons in dark. The methodology may be hopefully extended to other oxide semiconductors for high-performance photodetection.
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