Double injection into structures with a low-conductivity region. I. General considerations

Abstract

In the case of p+−π−n+ structure, the general regularities of distribution of non-equilibrium charge carriers in the low-conductivity layer are considered under condition of double injection. The boundary conditions are proposed for the quasi-neutral region. They emphasize the features of low-conductivity layer and are unified for long as well as for short structures. The number and mutual disposition of drift and diffusion regions are determined and their influence on the I–U characteristic is evaluated. The general expressions for the calculation of voltage drop due to current are obtained. The Dember e.m.f. as well as the voltage drop in the junctions p+−π, π−n+ are taken into consideration. The presented method is suitable also for the case, when lifetime of non-equilibrium charge carriers and ambipolar diffusion coefficient vary with the increase of the injection level. In the next part of this work the presented method is utilized for the calculation and classification of I–U characteristics of semiconductors with the single impurity level under conditions of double injection. [Russian Text Ignored].