Abstract
Double-injection switching devices consist of a p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> and an n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> junction for injecting holes and electrons into the high resistivity semiconductor substrate containing compensated (charged) deep traps. These devices show an S-type switching beyond a certain threshold voltage. One possible use of such DI devices is for pulse width modulation. When the device is pulsed with a voltage V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</inf> exceeding V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Th</inf> the current output of the device appears with increasing pulse width as V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</inf> is increased, for a given input pulse width. An inverse relationship between V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</inf> and the delay with which the pulse appears, has been found experimentally and is being modeled.
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