Abstract
The fabrication and performance characteristics of double-implanted GaAs complementary junction field-effect transistors (JFET's) suitable for low-power digital integrated circuit applications are described. Effective mobilities for the n-channel enhancement-mode JFET are 3500 cm2/V.s and for the p-channel 300 cm2/V.s. Experimental results of an ultra-low-power static RAM are presented.
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