Abstract
The authors outline the utilization of low-dose implant monitoring (boron, 10/sup 11/ ions/cm/sup 2/) in a manufacturing line to control the pinchoff voltage of junction field effect transistors (JFETs) in analog integrated circuits. This technique relies on the fact that the sheet resistance of a doped layer increases significantly when damaged by a relatively low implant dose. The technique is extremely sensitive and is used to adjust the channel dose for achieving an accurate pinchoff voltage and saturation current for JFETs. Finally, yield enhancement is discussed in terms of pinchoff voltage control of JFETs. >
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