Abstract
We demonstrated ultra-thin-body (UTB) junctionless (JL) p-type field-effect transistors (pFETs) on Si using GaAs channels. Wafer bonding and epitaxial lift-off techniques were employed to fabricate the UTB p-GaAs-on-insulator on a Si template. Subsequently, we evaluated the JL FETs having different p-GaAs channel thicknesses considering both maximum depletion width and doping concentration for high performance. Furthermore, by introducing a double-gate operation, we more effectively controlled threshold voltage and attained an even higher ION/IOFF of >106, as well as a low subthreshold swing value of 300 mV/dec.
Highlights
The strong demands for using III-V compound semiconductors (CSs) as channel materials have led to platforms such as III-V CS on Si in order to realize cost-effective mass production.[3,4,5]
Among the many experimental approaches,[6,7,8,9,10] wafer bonding and epitaxial lift-off (ELO) techniques have been preferred for accomplishing III-V CSs on Si.[6,7]
Contrary to the direct epitaxial growth of III-V CSs on a lattice mismatched Si substrate,[8,9] a high-quality III-V channel is guaranteed by transferring the III-V CS layer from a lattice-matched III-V donor substrate to the Si, regardless of the lattice constant difference.[6,7,10]
Summary
III-V compound semiconductors (CSs) have been widely suggested for achieving high performance CMOS transistors with low power consumption because of their high electron mobility and low effective mass.[1,2] The strong demands for using III-V CSs as channel materials have led to platforms such as III-V CS on Si in order to realize cost-effective mass production.[3,4,5] Among the many experimental approaches,[6,7,8,9,10] wafer bonding and epitaxial lift-off (ELO) techniques have been preferred for accomplishing III-V CSs on Si.[6,7] Contrary to the direct epitaxial growth of III-V CSs on a lattice mismatched Si substrate,[8,9] a high-quality III-V channel is guaranteed by transferring the III-V CS layer from a lattice-matched III-V donor substrate to the Si, regardless of the lattice constant difference.[6,7,10] an ultra-thin-body (UTB) III-V channel on Si can be fabricated and applied for vertical 3D stacking by just repeating the subsequent layer transfer.[11,12,13].
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