Abstract
This paper presents a straightforward, low-cost, and effective integration process for the fabrication of membrane gate thin film transistors (TFTs) with an air gap. The membrane gate TFT with an air gap can be used as the highly sensitive tactile force sensor. The suspended membrane gate with an air gap as the insulator layer is formed by multiple photolithography steps and photoresist sacrificial layers. The viscosity of the photoresist and the spin speed was used to modify the thickness of the air gap during the coating process. The tactile force was measured by monitoring the drain current of the TFT as the force changed the thickness of the air gap. The sensitivity of the devices was enhanced by an optimal gate size and low Young’s modulus of the gate material. This simple process has the potential for the production of small, versatile, and highly sensitive sensors.
Highlights
A range of microelectromechanical systems (MEMS) have been proposed and fabricated for a range of applications
The convergence of a complementary metal-oxide-semiconductor (CMOS) and a microelectrochemical system to produce a suspended-gate metal-oxide-semiconductor fieldeffect transistor (MOSFET) with an air gap was proposed as a methodology to fabricate a new generation of sensors, with some spectacular results reported [5, 6]
This paper reports a suspended-gate thin film transistors (TFTs) structure with an air gap insulator and IZGO channel for tactile force sensor applications
Summary
A range of microelectromechanical systems (MEMS) have been proposed and fabricated for a range of applications. The convergence of a complementary metal-oxide-semiconductor (CMOS) and a microelectrochemical system to produce a suspended-gate metal-oxide-semiconductor fieldeffect transistor (MOSFET) with an air gap was proposed as a methodology to fabricate a new generation of sensors, with some spectacular results reported [5, 6]. A suspended-gate air gap MOSFET built on a Si channel has been reported [7, 8] but the optical and mechanical properties of silicon have limited their applications in the flexible, transparent, and wearable sensors compares to the other device structures [9, 10].
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