Abstract
In order to improve the carrier transfer driving force and separation efficiency, OV-BiOBr/Cu2−xS high-low junction with double defects (Oxygen vacancy and Copper vacancy) was successfully prepared by a facile two-step solvothermal in situ growth technique. OV-BiOBr/Cu2−xS-0.2 showed the highest hydrogen evolution rate (509.75 μmol·cm−2·h−1), which was 12.45, 6.94 and 3.44 times that of pure BiOBr, OV-BiOBr and BiOBr/Cu2−xS composite, respectively. Obvious free radicals (·OH and ·O2-) were observed in the dark state for the first time. Theoretical and experimental results demonstrate that the charge imbalance within OV-BiOBr/Cu2−xS intensifies after the introduction of the double defects, resulting in enhanced interfacial polarization phenomena. Boosted photoelectrochemical hydrogen evolution activities were achieved with the synergistic effect of the internal electric field and polarization electric field. This study will lay a scientific and experimental foundation for the preparation of high-performance photoelectrochemical anode materials with double defect heterojunction.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
