Abstract
The high efficiency of double-crystal X-ray diffractometry and topography methods in the characterization of crystals during refinement of the crystal-growth technology is demonstrated for the example of diamond bulk crystals and films obtained by the high pressure, high temperature method and by chemical vapor deposition, respectively. Techniques and study schemes for analysis of the real crystal structure, assessment of the chemical composition and the period of the crystal lattice, and analysis of the distinctive features of the deformation and thickness of thin films are described. Major structural defects (dislocations, stacking defects, inclusions of a different phase, and others) that emerge during the production of synthetic diamond crystals are identified.
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