Abstract
The core-shell double Z-scheme Zn2SnO4/BiO2-x/Bi2O2.75 heterojunction was prepared by in-situ hydrothermal reaction. The electrons of BiO3− were captured by interfacial Zn/Sn atoms of positively charged Zn2SnO4 and crystallized in-situ to form core-shell Zn2SnO4/BiO2-x. Then, Bi2O2.75 crystal nucleus generated by homogeneous nucleation nucleated and grown heterogeneously again on the surface of Zn2SnO4/BiO2-x to form core-shell Zn2SnO4/BiO2-x/Bi2O2.75 heterojunction with the increased concentration of oxygen vacancies, meanwhile forming electrostatic attraction and potential difference-induced build-in electric fields at the interfaces of Zn2SnO4/BiO2-x and BiO2-x/Bi2O2.75. The transformation from Ⅱ-Ⅰ-type to Ⅱ-Ⅱ-type, double Z-double heterojunction was achieved due to polarization charge transfer and the synergistic effect of double build-in electric fields and oxygen vacancies. The higher concentration of O2– and OH radicals were generated by Zn2SnO4/BiO2-x/Bi2O2.75 in dark and under visible-NIR light irradiation due to the enhanced O2 activation, improved carriers’ separation and stronger redox ability. Therefore, semiconductor-nonmetal plasma coupling heterojunction exhibited the enhanced dark-full-spectrum-driven photocatalytic activity for NO removal and organic pollutants degradation.
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