Abstract
In this work, we employed MAPbBr3 quantum dots (QDs) and MABr salt as buffer layers to boost the optoelectronic characteristics of CsPbBr3 perovskite light-emitting diodes (PeLEDs). The MAPbBr3 QDs were prepared by ligand-assisted reprecipitation method and using MAPbBr3 bulk single crystals as source material, but traditional powder source. The MAPbBr3 bulk single crystals were obtained by inverse temperature crystallization method. The purification cycles of bulk-crystal source MAPbBr3 quantum dots (bc-MAPbBr3 QDs) were studied. The bc-MAPbBr3 QDs and MABr salt were applied into the PeLED structures. The best brightness reached 7555 cd m−2, and the external quantum efficiency reached 0.318%.
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