Double base hot electron transistor

Abstract

We propose a novel device concept of focusing a hot-electron beam for ballistic injection. Such a focused beam may be achieved by passing injected electrons through a doped semiconductor layer with a built-in electric field. This leads to a more narrow and energy-monochromatic beam. When such a beam is used in ballistic devices, the device performance should significantly improve. As an example, we propose a novel Double-Base-Hot-Electron Transistor (DBHET). Some preliminary calculations demonstrate that both electron transit time across the active base and the density of high energy electrons improve in DBHETs compared to conventional Hot-electron Transistors (HETs). We also show that the DBHET has better temperature stability because of its more energetic and monochromatic electron beam injected into the active base.