Abstract
Damage to GaAs devices from energetic electrons is shown to rise very rapidly above 600 keV. Therefore, methods of dosimetry that are more sensitive to low-energy electrons (i.e., that determine deposited energy rather than atomic displacement) could be inappropriate for GaAs. For example, a 1-MeV electron irradiation requires an order-of-magnitude lower dose (in rad) to cause the same degradation as a Co60 source in a GaAs FET. Such considerations argue against the use of rad dose to define mission radiation requirements and laboratory source calibration for GaAs devices.
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