Abstract
The unshielded Si diode PTW 60012, used for accurate measurements of the transversal dose profiles of narrow photon beams, has been investigated with regard to its linearity, photon energy dependence and spatial resolution. The diode shows a slight supralinearity, i.e. increase of the response with pulse dose, by 3% over the pulse dose range 0.1 to 0.8mGy. In p-type silicon, supralinearity results from the increased chance for radiation-induced electrons to escape recombination when the pulse dose increases. Over the energy range from 6 to 15 MV, the response decreases by about 4%. This small variation of the response results from partial compensation between the influences of the secondary electron energy on the mass stopping power ratio silicon/water and on electron backscattering from the silicon chip. The lateral response function of the examined diode has a full half width of 1.3mm. Dose profiles of 5mm half-width can still be recorded with negligible error.
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