Dose rate effect of gamma on JFET transistors

Abstract

Dose rate effects on the noise characteristics of gamma-irradiated junction field effect transistors (JFETs) are presented. The dose rate varied between 0.5 and 19 kGy/h at a constant radiation dose of 600 kGy. Neither obvious nor non-general relationship was identified between noise and dose rate along the total dose rate range. Nevertheless, some explanations have been provided about the resulting effects when the total range was studied, as some partial ranges corresponded to low, medium and high dose rates. This explanation is based on the gamma interaction process in JFET structure and the electronic noise resulted.