Abstract
ABSTRACTThe dose rate dependence of 300 keV Si+ ion beam induced epitaxial crystallization (IBIEC) of a 200 nm thick amorphous silicon surface layer at 400°C is investigated in the ion dose rate range from 3 · 1010 up to 3 · 1013cm2s−1. The experimental results are compared with theoretical predictions from several models. Special emphasis is given to the influence of the depth distribution of the nuclear energy deposition on the growth process during both the experiment and the theoretical analysis. According to our experimental results the IBIEC rate is indirectly proportional to the fourth root of the dose rate. This is in excellent agreement with a point defect diffusion model of IBIEC considering pairwise defect annihilation.
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