Dose dependence of epitaxial regrowth of Se-implanted GaAs

Abstract

High resolution Rutherford backscattering and channeling measurements have been used to investigate the annealing behavior of Se-implanted GaAs layers. The dose dependence of the as-implanted damage and residual disorder after annealing at 400 °C has been examined. Results show that the residual disorder increases rather sharply at a dose just above that required to amorphize the surface layer and then reaches a saturation level. Once the saturation level is reached, the residual disorder is dependent almost linearly on the thickness of the amorphous layer.