Abstract
The paper compares the properties of bismuth doped ZnS and ZnSe films obtained by two different doping techniques: (i) The sandwiching technique, in which two layers of dopant material are sandwiched between chalcogenide material and (ii) nano-particle incorporation technique in which chalcogenide layer is deposited on top of a layer of bismuth nano particles. The carrier concentration, mobility etc. were found by Hall effect measurements. The ease and effectiveness of the two doping techniques have been evaluated.
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