Abstract
Selective epitaxial growth of Si- and Zn-doped GaAs was carried out by atmospheric-pressure metalorganic chemical vapor deposition. The carrier concentration of the selective epilayers changed from that of the uniformly grown epilayers: decrease in Si-doping efficiency and increase in Zn-doping efficiency in selective epitaxial growth. The main cause for these phenomena is the lateral supply of AsH3 from SiO2-mask areas to GaAs-window areas, which is induced by the selective decomposition of AsH3.
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