Abstract
A new method of doping for ZnSe was attempted by using a neutral radical beam during the MBE growth. The radical beam dominantly consisted of N 2 molecular radicals at A 3σ + u state. The sticking coefficient of nitrogen was remarkably enhanced; thus this doping method was able to incorporate N into ZnSe by 10 19 cm −3. The existence of shallow N acceptors was confirmed by photoluminescence measurements; recombination of free electrons and acceptor holes (FA) at room temperature and recombination of donor-acceptor pairs at low-temperature were observed. The FA emission was observed only for ZnSe layers with moderate doping level, which shows p-type conduction. The carrier concentration was the order of 10 15 cm −3. The activation of N in ZnSe was less than 1%.
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