Abstract
Disilane (Si2H6) is presented as a new silicon doping source in the organometallic vapor-phase epitaxy of InP and GaInAs. The doping characteristics of disilane were studied under a range of growth conditions used to obtain device quality layers. Silicon incorporation by means of disilane shows a different behavior in InP and GaInAs doping. The slope of the log N vs log (disilane flow) plot is 0.75 for InP and 1 for GaInAs. A variation of doping level with growth temperature was observed revealing an activation energy of 1.2 eV in the case of InP. Electrical measurements on disilane-doped InP and GaInAs yield the same high mobilities as obtained in otherwise doped films, indicative of low compensation.
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