Doping of InGaP epitaxial layers grown by low pressure metal-organic chemical vapor deposition

Abstract

DEZn and H 2Se were utilized as p- and n-type dopant sources for the growth in InGaP layers by low pressure metal-organic chemical vapor deposition (LP-MOCVD). The decrease in intensity of the extra spots of electron diffraction indicates that disordering is induced by the zinc doping. Streaky and wavy diffraction patterns demonstrate the formation of anti-phase domains caused by the Se dopant incorporation. The growth rate of the grown layer is reduced by more than 10% owing to the dopant incorporation. A photoluminescence emission energy difference of 141 meV between undoped and Zn-doped (5.8 × 10 18 cm −3) InGaP was obtained. The effects of doping on disordering, degeneracy of quasi-Fermi level and lattice constant reduction of grown layers were included in this study.