Abstract
The doping of amorphous carbon films with over 80% sp3 bonding is examined. It is shown that n-type doping with P and N is possible. p-type doped with B has been unsuccessful. The electronic properties of this form of amorphous carbon which has an optical band-gap of 2eV is taken as being governed largely by the π and π∗ states which arise due to the much smaller fraction of sp2 bonded C. With low levels of N doping there is evidence for compensation of p-type defects in the undoped material. It is thought that dopants which have deep levels in diamond appear as shallow dopants in tetrahedral amorphous carbon due to the presence of the π states.
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