Abstract
Graphene provides a perfect platform to explore the unique electronic properties in two-dimensions. However, most electronic applications are handicapped by the absence of a semiconducting gap in pristine graphene. To control the semiconducting properties of graphene, doping is regarded as one of the most feasible methods. Here we demonstrate that graphene can be effectively doped during chemical exfoliation of highly ordered pyrolitic graphite in organic solvents. Layered structure of graphene sheets was confirmed by confocal Raman spectroscopy and doping was probed by analyzing shift in Raman peak positions and transistor transfer (IDS-VGS) characteristics.
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