Doping of GaN with Si and properties of blue m/i/n/n + GaN LED with Si-doped n +-layer by MOVPE

Abstract

The doping of GaN with silicon (Si) has been studied using SiH 4 as the Si source gas. A Si-doped n-type GaN film with a free electron concentration of 10 16-10 18cm -3 and resistivity of 1−10 -2Ω cm at RT can be easily obtained by controlling the flow rate of SiH 4 during growth. Blue m/i/n/n + LEDs have been fabricated for the first time using a Si-doped n +-GaN layer. The EL peak wavelength was ≁ 485 nm, and brightness was ≁ 50 mcd at a forward current of 10mA.