Abstract
The influence of the doping of heterocontacting AgBr/AgBr(I) and AgBr/AgCl grains by [IrCl6]3− ions on photographic speed was investigated. Isometric and tabular crystals were used as a substrate. The incorporation of doping ions into the heterocontact zone was found to result in a change in the kinetics of the photoinduced charge carrier interaction. The optimal doping ion concentration allows the photographic speed increase and high-intensity reciprocal failure (HIRF) decrease to be to revealed. The photographic speed and HIRF values are shown to depend essentially on crystal habit. Based on the experimental data, a phenomenological model of the photoprocess in doped heterophase AgHal grains is suggested.
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