Abstract
P-type dc-glow-discharge a-Si films have been prepared using boron trifluoride as the doping agent. Film growth on various cathodic substrates is examined. The effect of BF 3-doping on hydrogen incorporation into the a-Si network is investigated using the 15N profiling technique and FIR measurements of Si-H vibrational modes. The concentration of boron and fluorine that is incorporated into BF 3-doped films is profiled using SIMS. Data on the dark conductivity of BF 3-doped films is presented.
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