Doping induced effect on optical and band structure properties of Sr2Si5N8 based phosphors: DFT approach

Abstract

Nitrido silicates are emerged as highly efficient luminescent materials (phosphors) that found considerable industrial application as white light emitting diodes (LEDs) have been studied with respect to band structure and related electronic structure parameters. They have tunable optical properties, as the band gap is of indispensable because it determines both the electrical and optical features of the material, which can be varied by the material composition (by doping technique). It is found also that the nitride (alumo) silicates “Sr2Si5N8: Eu2+” have wide industrial application as highly efficient red-emitting phosphor materials in pc-LEDs. In this report we apply density functional theory (DFT) within the GGA+U approach to study the structural, electronic and optical properties of Eu2+ and Ce3+ doped Sr2Si5N8. The total energy has been optimized as a function of the unit cell volume. Electronic structure including, the electronic density of state (DOS), the band structure and the linear optical susceptibility are calculated for the relaxed structure applying the optimized lattice constant. The calculated optical dispersion of dielectric susceptibility are closely related to the corresponding electronic structure and our results are in very good agreement with experimental data.