Abstract
A dielectric anomaly induced by doping has been observed at about 340 K in chlorine-doped diisopropylammonium bromide. The dielectric anomaly has a switchable behaviour, which indicates potential applications on switches and sensors. Temperature-dependent Raman spectrum, X-ray diffraction and differential scanning calorimetry do not show any anomaly around the dielectric anomaly temperature, which prove that the dielectric anomaly does not come from structure phase transition and has no specific heat variety. It is assumed that this dielectric anomaly can be attributed to the freezing of ferroelectric domain walls induced by the pinning of point defects.
Highlights
Piezoelectric materials have been widely applied in the energy conversion, sensing, driving and frequency fields
A dielectric anomaly was found at 340 K in the chlorine-doped diisopropylammonium bromide (DIPAB), which does not appear in pure DIPAB
Relaxation modes are different near the dielectric anomaly temperature
Summary
Piezoelectric materials have been widely applied in the energy conversion, sensing, driving and frequency fields. Ferroelectrics usually feature a switchable spontaneous electric polarization and have good piezoelectric performance [1]. Relaxor-based ferroelectric single crystals, such as Pb(Zn1/3Nb2/3)O3 – PbTiO3 and Pb(Mg1/3Nb2/3)O3 – PbTiO3 attract much attention for their large piezoelectric coefficients up to 2500 pC N21 and high subsequent strain levels up to 0.6% [2,3].
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