Abstract
The properties of two sets of samples, prepared using different RF-power densities and SiH4/CH4 proportions have been analysed as functions of BF3 percentage with respect to SiH4. In both cases, the optical gap EG, after a slight initial decrease, remains at a value of approximately 2.1 eV without quenching in the doping ranges covered. At a high RF-power density of 88 mW/cm2 using a gas mixture -containing 37% CH4, conductivity improves only for dopant concentrations not beyond 9%, where it reaches a maximum value of 1 x 10-8 (Ω cm)-1. On the other hand, when a smaller RF-power density of 44 mW/cm2 is applied to a gas mixture with 26% CH4, no conductivity saturation is observed up to 15% BF3. Tne best value obtained is - 2 x 10-7 (Ω cm-1). IR spectra allow to associate these features with film structural quality.
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